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| SEMICONDUCTOR TECHNICAL DATA VCO FOR UHF Band Radio. KDV245E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE High Capacitance Ratio : C0.5V/C2.5V =2.5(Typ.) Low Series Resistance : rs=0.35 Useful for Small Size Tuner. (Typ.) CATHODE MARK FEATURES C 1 E 2 D F MAXIMUM RATING (Ta=25 CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range ) SYMBOL VR Tj Tstg RATING 10 150 -55 150 UNIT V 1. ANODE 2. CATHODE B A DIM A B C D E F MILLIMETERS _ 1.60 + 0.10 _ 1.20 + 0.10 _ 0.80 + 0.10 _ 0.30 + 0.05 _ 0.60 + 0.10 _ 0.13 + 0.05 ESC ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Reverse Voltage Reverse Current Capacitance Capacitance Ratio Series Resistance SYMBOL VR IR C0.5V C2.5V K rS IR=1 A VR=10V VR=0.5V, f=1MHz VR=2.5V, f=1MHz C0.5V/C2.5V, f=1MHz VR=1V, f=470MHz TEST CONDITION MIN. 10 7.3 2.75 2.4 TYP. 2.5 0.35 MAX. 3 8.4 3.4 UNIT V nA pF Marking Type Name ED 2003. 1. 27 Revision No : 0 1/2 KDV245E C T - VR 30 CAPACITANCE CT (pF) SERIES RESISTANCE r s () f=1MHz Ta=25 C r s - VR 0.6 0.5 0.4 0.3 0.2 0.1 0 f=470MHz Ta=25 C 10 5 3 1 0 1 2 3 4 5 6 0.1 0.3 0.5 1 3 5 10 REVERSE VOLTAGE VR (V) REVERSE VOLTAGE VR (V) 2003. 1. 27 Revision No : 0 2/2 |
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